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2N6286G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-204AA, TO-3
- ON SEMICONDUCTOR - 2N6286G - Bipolar (BJT) Single Transistor, Darlington, PNP, 80 V, 160 W, 40 A, 18 hFE
Date Sheet
在庫數 13
- 1+： $9.57245
- 10+： $9.03061
- 100+： $8.51944
- 500+： $8.03721
- 1000+： $7.58228
小計金額 $9.57245
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time：2 Weeks
- Contact Plating：Tin
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Surface Mount：NO
- Number of Pins：2
- Weight：4.535924g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：80V
- Collector-Emitter Saturation Voltage：2V
- Power Dissipation (Max)：160W
- Number of Elements：1
- Operating Temperature：-65°C~200°C TJ
- Packaging：Tray
- Published：2008
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Voltage - Rated DC：-80V
- Terminal Position：BOTTOM
- Terminal Form：PIN/PEG
- Peak Reflow Temperature (Cel)：260
- Current Rating：20A
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：2N6286
- Polarity：PNP
- Element Configuration：Single
- Case Connection：COLLECTOR
- Transistor Application：AMPLIFIER
- Transistor Type：PNP - Darlington
- Collector Emitter Voltage (VCEO)：80V
- Max Collector Current：20A
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 10A 3V
- Current - Collector Cutoff (Max)：1mA
- Vce Saturation (Max) @ Ib, Ic：3V @ 200mA, 20A
- Transition Frequency：4MHz
- Collector Base Voltage (VCBO)：80V
- Emitter Base Voltage (VEBO)：5V
- Continuous Collector Current：20A
- Height：8.51mm
- Length：39.37mm
- Width：26.67mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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