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2SD1624S-TD-E
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-243AA
- GP BJT
Date Sheet
在庫數 12765
- 1+: $1.10124
- 10+: $1.03890
- 100+: $0.98010
- 500+: $0.92462
- 1000+: $0.87228
小計金額 $1.10124
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time:5 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-243AA
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:50V
- Collector-Emitter Saturation Voltage:500mV
- Power Dissipation (Max):500mW
- Number of Elements:1
- hFEMin:100
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2012
- JESD-609 Code:e6
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin/Bismuth (Sn/Bi)
- HTS Code:8541.21.00.75
- Terminal Form:FLAT
- Base Part Number:2SD1624
- Element Configuration:Single
- Case Connection:COLLECTOR
- Transistor Application:SWITCHING
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:3A
- DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 100mA 2V
- Current - Collector Cutoff (Max):1μA ICBO
- Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 2A
- Max Frequency:150MHz
- Transition Frequency:150MHz
- Max Breakdown Voltage:50V
- Frequency - Transition:150MHz
- Collector Base Voltage (VCBO):60V
- Emitter Base Voltage (VEBO):6V
- Height:1.5mm
- Length:4.5mm
- Width:2.5mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 12765
- 1+: $1.10124
- 10+: $1.03890
- 100+: $0.98010
- 500+: $0.92462
- 1000+: $0.87228
小計金額 $1.10124
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