BC636TA

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Bipolar Transistors - BJT TO-92 PNP GP AMP
Date Sheet

在庫數 35134

1+： $0.29772
10+： $0.28086
100+： $0.26497
500+： $0.24997
1000+： $0.23582

小計金額 $0.29772

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
Factory Lead Time：2 Weeks
Contact Plating：Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins：3
Weight：240mg
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：45V
Collector-Emitter Saturation Voltage：-500mV
Number of Elements：1
hFEMin：40
Operating Temperature：150°C TJ
Packaging：Tape & Box (TB)
Published：2009
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Voltage - Rated DC：-45V
Max Power Dissipation：1W
Terminal Position：BOTTOM
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：-1A
Frequency：100MHz
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Base Part Number：BC636
Qualification Status：Not Qualified
Element Configuration：Single
Power Dissipation：1W
Transistor Application：SWITCHING
Gain Bandwidth Product：100MHz
Polarity/Channel Type：PNP
Transistor Type：PNP
Collector Emitter Voltage (VCEO)：45V
Max Collector Current：1A
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA 2V
Current - Collector Cutoff (Max)：100nA ICBO
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Transition Frequency：100MHz
Max Breakdown Voltage：45V
Collector Base Voltage (VCBO)：-45V
Emitter Base Voltage (VEBO)：-5V
Height：4.58mm
Length：4.58mm
Width：3.86mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 35134

1+： $0.29772
10+： $0.28086
100+： $0.26497
500+： $0.24997
1000+： $0.23582

小計金額 $0.29772

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