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SFT1202-E
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-251-3 Short Leads, IPak, TO-251AA
- Bipolar Transistors - BJT BIP NPN 2A 150V
Date Sheet
在庫數 7809
- 1+: $0.29037
- 10+: $0.27393
- 100+: $0.25842
- 500+: $0.24380
- 1000+: $0.23000
小計金額 $0.29037
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time:2 Weeks
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
- Surface Mount:NO
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:150V
- Power Dissipation (Max):1W
- Number of Elements:1
- hFEMin:200
- Operating Temperature:150°C TJ
- Packaging:Bulk
- Published:2012
- JESD-609 Code:e6
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin/Bismuth (Sn/Bi)
- Terminal Position:SINGLE
- Configuration:SINGLE
- Case Connection:COLLECTOR
- Power - Max:1W
- Transistor Application:SWITCHING
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):150V
- Max Collector Current:2A
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100mA 5V
- Current - Collector Cutoff (Max):1μA ICBO
- Vce Saturation (Max) @ Ib, Ic:165mV @ 100mA, 1A
- Transition Frequency:140MHz
- Frequency - Transition:140MHz
- Collector Base Voltage (VCBO):180V
- Emitter Base Voltage (VEBO):7V
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 7809
- 1+: $0.29037
- 10+: $0.27393
- 100+: $0.25842
- 500+: $0.24380
- 1000+: $0.23000
小計金額 $0.29037
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