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2N3019

在庫數 9000

小計金額 $0.00000

仕様 よくある質問
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Number of Pins:3
  • Weight:4.535924g
  • Transistor Element Material:SILICON
  • Collector-Emitter Breakdown Voltage:80V
  • Collector-Emitter Saturation Voltage:500mV
  • Frequency - Gain Bandwidth Product (GBP):100MHz
  • Power Dissipation (Max):800mW
  • Number of Elements:1
  • hFEMin:100
  • Operating Temperature:175°C TJ
  • Packaging:Tube
  • JESD-609 Code:e3
  • Pbfree Code:yes
  • Part Status:Obsolete
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Terminal Finish:Matte Tin (Sn)
  • Voltage - Rated DC:140V
  • Terminal Position:BOTTOM
  • Terminal Form:WIRE
  • Current Rating:1A
  • Frequency:100MHz
  • Base Part Number:2N30
  • Element Configuration:Single
  • Power Dissipation:800mW
  • Transistor Application:AMPLIFIER
  • Polarity/Channel Type:NPN
  • Transistor Type:NPN
  • Collector Emitter Voltage (VCEO):80V
  • Max Collector Current:1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA 10V
  • Current - Collector Cutoff (Max):10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Transition Frequency:100MHz
  • Collector Base Voltage (VCBO):140V
  • Emitter Base Voltage (VEBO):7V
  • Diameter:9.4mm
  • Height:6.6mm
  • Length:9.4mm
  • Width:9.4mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 9000

小計金額 $0.00000