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2N5087RLRA
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Bipolar Transistors - BJT 50mA 50V PNP
Date Sheet
在庫數 219
小計金額 $0.00000
仕様 よくある質問
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins：3
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：50V
- Collector-Emitter Saturation Voltage：300mV
- Frequency - Gain Bandwidth Product (GBP)：40MHz
- Power Dissipation (Max)：625mW
- Number of Elements：1
- hFEMin：250
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2006
- JESD-609 Code：e0
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin/Lead (Sn/Pb)
- Additional Feature：LOW NOISE
- HTS Code：8541.21.00.95
- Voltage - Rated DC：-50V
- Terminal Position：BOTTOM
- Peak Reflow Temperature (Cel)：240
- Reach Compliance Code：not_compliant
- Current Rating：-50mA
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：2N5087
- Qualification Status：Not Qualified
- Element Configuration：Single
- Power - Max：625mW
- Transistor Application：AMPLIFIER
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：50V
- Max Collector Current：50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100μA 5V
- Current - Collector Cutoff (Max)：50nA ICBO
- Vce Saturation (Max) @ Ib, Ic：300mV @ 1mA, 10mA
- Transition Frequency：40MHz
- Max Breakdown Voltage：50V
- Collector Base Voltage (VCBO)：50V
- Emitter Base Voltage (VEBO)：3V
- RoHS Status：Non-RoHS Compliant
- Lead Free：Contains Lead
在庫數 219
小計金額 $0.00000
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