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BD442S

在庫數 0

小計金額 $0.00000

仕様 よくある質問
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Number of Pins:3
  • Weight:761mg
  • Transistor Element Material:SILICON
  • Collector-Emitter Breakdown Voltage:80V
  • Collector-Emitter Saturation Voltage:-800mV
  • Number of Elements:1
  • hFEMin:15
  • Operating Temperature:150°C TJ
  • Packaging:Bulk
  • JESD-609 Code:e3
  • Pbfree Code:yes
  • Part Status:Obsolete
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Terminal Finish:Tin (Sn)
  • Voltage - Rated DC:-80V
  • Max Power Dissipation:36W
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Current Rating:-4A
  • Frequency:3MHz
  • Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
  • Base Part Number:BD442
  • Qualification Status:Not Qualified
  • Element Configuration:Single
  • Power Dissipation:36W
  • Transistor Application:SWITCHING
  • Gain Bandwidth Product:3MHz
  • Polarity/Channel Type:PNP
  • Transistor Type:PNP
  • Collector Emitter Voltage (VCEO):80V
  • Max Collector Current:4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 500mA 1V
  • Current - Collector Cutoff (Max):100μA
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 200mA, 2A
  • Transition Frequency:3MHz
  • Collector Base Voltage (VCBO):-80V
  • Emitter Base Voltage (VEBO):-5V
  • RoHS Status:RoHS Compliant
  • Lead Free:Lead Free

在庫數 0

小計金額 $0.00000