BC337-40RL1G

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TRANS NPN 45V 0.8A TO-92
Date Sheet

在庫數 2000

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：LAST SHIPMENTS (Last Updated: 20 hours ago)
Contact Plating：Copper, Silver, Tin
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount：NO
Number of Pins：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：45V
Collector-Emitter Saturation Voltage：700mV
Frequency - Gain Bandwidth Product (GBP)：210MHz
Power Dissipation (Max)：625mW
Number of Elements：1
hFEMin：250
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2009
JESD-609 Code：e1
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature：EUROPEAN PART NUMBER
Voltage - Rated DC：45V
Terminal Position：BOTTOM
Peak Reflow Temperature (Cel)：260
Current Rating：100mA
Frequency：210MHz
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：BC337
Output Voltage：9V
Element Configuration：Single
Power Dissipation：625mW
Transistor Application：AMPLIFIER
Polarity/Channel Type：NPN
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：45V
Max Collector Current：800mA
DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA 1V
Current - Collector Cutoff (Max)：100nA
Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
Transition Frequency：210MHz
Max Breakdown Voltage：45V
Collector Base Voltage (VCBO)：50V
Emitter Base Voltage (VEBO)：5V
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 2000

小計金額 $0.00000

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BC337-40RL1G