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BC860BMTF
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-236-3, SC-59, SOT-23-3
- Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R
Date Sheet
在庫數 100000
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:LAST SHIPMENTS (Last Updated: 1 day ago)
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Number of Pins:3
- Weight:30mg
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:45V
- Collector-Emitter Saturation Voltage:-250mV
- Number of Elements:1
- hFEMin:110
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2004
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Additional Feature:LOW NOISE
- Voltage - Rated DC:-45V
- Max Power Dissipation:310mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Current Rating:-100mA
- Frequency:150MHz
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Base Part Number:BC860
- Qualification Status:Not Qualified
- Element Configuration:Single
- Power Dissipation:310mW
- Transistor Application:SWITCHING
- Gain Bandwidth Product:150MHz
- Polarity/Channel Type:PNP
- Transistor Type:PNP
- Collector Emitter Voltage (VCEO):45V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA 5V
- Current - Collector Cutoff (Max):15nA ICBO
- Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
- Transition Frequency:150MHz
- Max Breakdown Voltage:45V
- Collector Base Voltage (VCBO):-50V
- Emitter Base Voltage (VEBO):-5V
- Height:930μm
- Length:2.9mm
- Width:1.3mm
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free
在庫數 100000
小計金額 $0.00000
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