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KSA643YTA
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Bipolar Transistors - BJT PNP Epitaxial Transistor
Date Sheet
在庫數 11224
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：LAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time：6 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins：3
- Weight：240mg
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：20V
- Collector-Emitter Saturation Voltage：-300mV
- Power Dissipation (Max)：500mW
- Number of Elements：1
- hFEMin：40
- Operating Temperature：150°C TJ
- Packaging：Tape & Box (TB)
- Published：2007
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Voltage - Rated DC：-20V
- Terminal Position：BOTTOM
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Current Rating：-500mA
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：KSA643
- Qualification Status：Not Qualified
- Element Configuration：Single
- Power Dissipation：500mW
- Transistor Application：AMPLIFIER
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：20V
- Max Collector Current：500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 100mA 1V
- Current - Collector Cutoff (Max)：200nA ICBO
- Vce Saturation (Max) @ Ib, Ic：400mV @ 50mA, 500mA
- Max Breakdown Voltage：20V
- Collector Base Voltage (VCBO)：-40V
- Emitter Base Voltage (VEBO)：-5V
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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