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FJX945GTF
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- SC-70, SOT-323
- Bipolar Transistors - BJT NPN Epitaxial Transistor
Date Sheet
在庫數 122556
- 1+: $0.10022
- 10+: $0.09454
- 100+: $0.08919
- 500+: $0.08414
- 1000+: $0.07938
小計金額 $0.10022
仕様 よくある質問
- Lifecycle Status:LAST SHIPMENTS (Last Updated: 2 days ago)
- Factory Lead Time:6 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SC-70, SOT-323
- Number of Pins:3
- Weight:30mg
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:50V
- Collector-Emitter Saturation Voltage:150mV
- Number of Elements:1
- hFEMin:70
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2004
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:50V
- Max Power Dissipation:200mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Current Rating:150mA
- Frequency:300MHz
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Base Part Number:FJX945
- Qualification Status:Not Qualified
- Element Configuration:Single
- Power Dissipation:200mW
- Transistor Application:AMPLIFIER
- Gain Bandwidth Product:300MHz
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA 6V
- Current - Collector Cutoff (Max):100nA ICBO
- Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
- Transition Frequency:300MHz
- Max Breakdown Voltage:50V
- Collector Base Voltage (VCBO):60V
- Emitter Base Voltage (VEBO):5V
- Height:900μm
- Length:2mm
- Width:1.25mm
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 122556
- 1+: $0.10022
- 10+: $0.09454
- 100+: $0.08919
- 500+: $0.08414
- 1000+: $0.07938
小計金額 $0.10022
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