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FJP5200RTU
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-220-3
- TRANS NPN 250V 17A TO-220AB
Date Sheet
在庫數 557
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time:6 Weeks
- Lifecycle Status:LAST SHIPMENTS (Last Updated: 2 days ago)
- Package / Case:TO-220-3
- Mounting Type:Through Hole
- Mount:Through Hole
- Number of Pins:3
- Weight:1.8g
- Transistor Element Material:SILICON
- hFEMin:55
- Number of Elements:1
- Power Dissipation (Max):100W
- Frequency - Gain Bandwidth Product (GBP):30MHz
- Collector-Emitter Breakdown Voltage:250V
- Operating Temperature:-50°C~150°C TJ
- Packaging:Tube
- Published:2005
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Frequency:30MHz
- Element Configuration:Single
- Power Dissipation:100W
- Power - Max:80W
- Transistor Application:AMPLIFIER
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):250V
- Max Collector Current:17A
- DC Current Gain (hFE) (Min) @ Ic, Vce:55 @ 1A 5V
- Current - Collector Cutoff (Max):5μA ICBO
- JEDEC-95 Code:TO-220AB
- Vce Saturation (Max) @ Ib, Ic:3V @ 800mA, 8A
- Transition Frequency:30MHz
- Collector Base Voltage (VCBO):250V
- Emitter Base Voltage (VEBO):5V
- Radiation Hardening:No
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free
在庫數 557
小計金額 $0.00000
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