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FJP5200RTU

在庫數 557

小計金額 $0.00000

仕様 よくある質問
  • Factory Lead Time:6 Weeks
  • Lifecycle Status:LAST SHIPMENTS (Last Updated: 2 days ago)
  • Package / Case:TO-220-3
  • Mounting Type:Through Hole
  • Mount:Through Hole
  • Number of Pins:3
  • Weight:1.8g
  • Transistor Element Material:SILICON
  • hFEMin:55
  • Number of Elements:1
  • Power Dissipation (Max):100W
  • Frequency - Gain Bandwidth Product (GBP):30MHz
  • Collector-Emitter Breakdown Voltage:250V
  • Operating Temperature:-50°C~150°C TJ
  • Packaging:Tube
  • Published:2005
  • JESD-609 Code:e3
  • Pbfree Code:yes
  • Part Status:Obsolete
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Terminal Finish:Tin (Sn)
  • Frequency:30MHz
  • Element Configuration:Single
  • Power Dissipation:100W
  • Power - Max:80W
  • Transistor Application:AMPLIFIER
  • Polarity/Channel Type:NPN
  • Transistor Type:NPN
  • Collector Emitter Voltage (VCEO):250V
  • Max Collector Current:17A
  • DC Current Gain (hFE) (Min) @ Ic, Vce:55 @ 1A 5V
  • Current - Collector Cutoff (Max):5μA ICBO
  • JEDEC-95 Code:TO-220AB
  • Vce Saturation (Max) @ Ib, Ic:3V @ 800mA, 8A
  • Transition Frequency:30MHz
  • Collector Base Voltage (VCBO):250V
  • Emitter Base Voltage (VEBO):5V
  • Radiation Hardening:No
  • RoHS Status:RoHS Compliant
  • Lead Free:Lead Free

在庫數 557

小計金額 $0.00000

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