FDMS3660S

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
8-PowerTDFN
MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
Date Sheet

在庫數 6000

1+： $2.25245
10+： $2.12495
100+： $2.00467
500+： $1.89120
1000+： $1.78415

小計金額 $2.25245

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
Factory Lead Time：13 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Number of Pins：8
Weight：171mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：30A 60A
Number of Elements：2
Turn Off Delay Time：19 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2009
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Max Power Dissipation：2.5W
Terminal Form：FLAT
Base Part Number：FDMS3660S
JESD-30 Code：R-PDSO-F6
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN SOURCE
Turn On Delay Time：7.7 ns
Power - Max：1W
FET Type：2 N-Channel (Dual) Asymmetrical
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8m Ω @ 13A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1765pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：29nC @ 10V
Continuous Drain Current (ID)：30A
Threshold Voltage：1.5V
Gate to Source Voltage (Vgs)：12V
Drain Current-Max (Abs) (ID)：13A
Drain to Source Breakdown Voltage：30V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Nominal Vgs：1.5 V
Feedback Cap-Max (Crss)：70 pF
Height：1.1mm
Length：5mm
Width：5.9mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 6000

1+： $2.25245
10+： $2.12495
100+： $2.00467
500+： $1.89120
1000+： $1.78415

小計金額 $2.25245

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FDMS3660S