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DMN4031SSD-13
-
Diodes Incorporated
-
Transistors - FETs, MOSFETs - Arrays
- 8-SOIC (0.154, 3.90mm Width)
- MOSFET 2N-CH 40V 5.2A 8SO
Date Sheet
在庫數 360000
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time:15 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154, 3.90mm Width)
- Number of Pins:8
- Weight:73.992255mg
- Transistor Element Material:SILICON
- Number of Elements:2
- Turn Off Delay Time:19.8 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2012
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:8
- ECCN Code:EAR99
- Resistance:31mOhm
- Terminal Finish:Matte Tin (Sn)
- Additional Feature:HIGH RELIABILITY
- Max Power Dissipation:1.42W
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:DMN4031
- Pin Count:8
- Element Configuration:Dual
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2.6W
- Turn On Delay Time:6.4 ns
- FET Type:2 N-Channel (Dual)
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:31m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id:3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:945pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs:18.6nC @ 10V
- Rise Time:9.7ns
- Drain to Source Voltage (Vdss):40V
- Fall Time (Typ):3.1 ns
- Continuous Drain Current (ID):5.2A
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):7A
- Drain to Source Breakdown Voltage:40V
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- FET Feature:Logic Level Gate
- Height:1.5mm
- Length:4.95mm
- Width:3.95mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 360000
小計金額 $0.00000
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