FDS4559

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
8-SOIC (0.154, 3.90mm Width)
ON SEMICONDUCTOR - FDS4559 - DUAL N/P CHANNEL MOSFET, 60V, SOIC
Date Sheet

在庫數 10086

1+： $1.17921
10+： $1.11246
100+： $1.04949
500+： $0.99008
1000+： $0.93404

小計金額 $1.17921

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：8 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：187mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4.5A 3.5A
Number of Elements：2
Turn Off Delay Time：19 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2002
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：55MOhm
Max Power Dissipation：2W
Terminal Form：GULL WING
Current Rating：4.5A
Number of Channels：2
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2W
Power - Max：1W
FET Type：N and P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：55m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Rise Time：10ns
Polarity/Channel Type：N-CHANNEL AND P-CHANNEL
Fall Time (Typ)：12 ns
Continuous Drain Current (ID)：4.5A
Threshold Voltage：2.2V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：60V
Dual Supply Voltage：60V
Avalanche Energy Rating (Eas)：90 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)：175°C
FET Feature：Logic Level Gate
Nominal Vgs：2.2 V
Height：1.75mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 10086

1+： $1.17921
10+： $1.11246
100+： $1.04949
500+： $0.99008
1000+： $0.93404

小計金額 $1.17921

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FDS4559