STD17NF03L-1

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET, N CH, 30V, 17A, IPAK
Date Sheet

在庫數 9000

小計金額 $0.00000

仕様よくある質問

Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：17A Tc
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Number of Elements：1
Power Dissipation (Max)：30W Tc
Turn Off Delay Time：25 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.2V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tube
Series：STripFET™ II
JESD-609 Code：e3
Part Status：NRND (Last Updated: 8 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn)
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD17
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：30W
Case Connection：DRAIN
Turn On Delay Time：11 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：50m Ω @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：320pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：6.5nC @ 5V
Rise Time：100ns
Vgs (Max)：±16V
Fall Time (Typ)：22 ns
Continuous Drain Current (ID)：17A
Gate to Source Voltage (Vgs)：16V
Drain-source On Resistance-Max：0.06Ohm
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：68A
Avalanche Energy Rating (Eas)：200 mJ
Max Junction Temperature (Tj)：175°C
Nominal Vgs：1.5 V
Height：8.4mm
Length：6.6mm
Width：2.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

在庫數 9000

小計金額 $0.00000

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STD17NF03L-1