FDMS3662

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerTDFN
MOSFET 100V N-Channel PowerTrench
Date Sheet

在庫數 1102

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：10 Weeks
Contact Plating：Tin
Package / Case：8-PowerTDFN
Mount：Surface Mount
Mounting Type：Surface Mount
Number of Pins：8
Weight：68.1mg
Transistor Element Material：SILICON
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：8.9A Ta 49A Tc
Power Dissipation (Max)：2.5W Ta 104W Tc
Number of Elements：1
Turn Off Delay Time：32 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4.5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Resistance：14.8MOhm
Terminal Position：DUAL
Terminal Form：FLAT
JESD-30 Code：R-PDSO-F5
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：25 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：14.8m Ω @ 8.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds：4620pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：75nC @ 10V
Rise Time：15ns
Vgs (Max)：±20V
Fall Time (Typ)：6 ns
Continuous Drain Current (ID)：8.9A
Threshold Voltage：3.5V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：49A
Drain to Source Breakdown Voltage：100V
Pulsed Drain Current-Max (IDM)：90A
Nominal Vgs：3.5 V
Height：1.05mm
Length：5mm
Width：6mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 1102

小計金額 $0.00000

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FDMS3662