STB57N65M5

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 650V 42A D2PAK
Date Sheet

在庫數 2248

1+： $10.75138
10+： $10.14281
100+： $9.56869
500+： $9.02707
1000+： $8.51610

小計金額 $10.75138

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Factory Lead Time：17 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Manufacturer Package Identifier：D2PAK-0079457
Current - Continuous Drain (Id) @ 25℃：42A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：250W Tc
Turn Off Delay Time：12 ns
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Series：MDmesh™ V
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：63mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：245
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB57N
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：250W
Case Connection：DRAIN
Turn On Delay Time：73 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：63m Ω @ 21A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：4200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：98nC @ 10V
Rise Time：15ns
Vgs (Max)：±25V
Fall Time (Typ)：19 ns
Continuous Drain Current (ID)：42A
Threshold Voltage：4V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：650V
Avalanche Energy Rating (Eas)：960 mJ
Max Junction Temperature (Tj)：150°C
Height：4.83mm
Length：10.4mm
Width：9.35mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2248

1+： $10.75138
10+： $10.14281
100+： $9.56869
500+： $9.02707
1000+： $8.51610

小計金額 $10.75138

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STB57N65M5