NDS0610

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-236-3, SC-59, SOT-23-3
MOSFET P-CH 60V 120MA SOT-23
Date Sheet

在庫數 562

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：8 Weeks
Package / Case：TO-236-3, SC-59, SOT-23-3
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Number of Pins：3
Weight：30mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：120mA Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：360mW Ta
Turn Off Delay Time：10 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3.5V @ 1mA
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
Published：2002
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：10Ohm
Voltage - Rated DC：-60V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-120mA
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：360mW
Turn On Delay Time：2.5 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：10 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：79pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 10V
Rise Time：6.3ns
Drain to Source Voltage (Vdss)：60V
Vgs (Max)：±20V
Fall Time (Typ)：6.3 ns
Continuous Drain Current (ID)：-120mA
Threshold Voltage：-1.7V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：-60V
Dual Supply Voltage：-60V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：-1.7 V
Feedback Cap-Max (Crss)：5 pF
Height：1.11mm
Width：3.05mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 562

小計金額 $0.00000

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NDS0610