SI4435DY

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R
Date Sheet

在庫數 88000

1+： $1.24156
10+： $1.17129
100+： $1.10499
500+： $1.04244
1000+： $0.98343

小計金額 $1.24156

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 15 hours ago)
Factory Lead Time：18 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：8.8A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：42 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2001
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：20MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC：-30V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-8.8A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：16 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：20m Ω @ 8.8A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1604pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：24nC @ 5V
Rise Time：13.5ns
Drain to Source Voltage (Vdss)：30V
Vgs (Max)：±20V
Fall Time (Typ)：25 ns
Continuous Drain Current (ID)：-8.8A
Threshold Voltage：-1.7V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：-30V
Dual Supply Voltage：-30V
Nominal Vgs：-1.7 V
Height：1.57mm
Length：4.9mm
Width：3.9mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 88000

1+： $1.24156
10+： $1.17129
100+： $1.10499
500+： $1.04244
1000+： $0.98343

小計金額 $1.24156

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SI4435DY