STB16NF06LT4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Trans MOSFET N-CH 60V 16A 3-Pin(2 Tab) D2PAK T/R
Date Sheet

在庫數 277

1+： $1.71467
10+： $1.61761
100+： $1.52605
500+： $1.43967
1000+： $1.35818

小計金額 $1.71467

仕様よくある質問

Factory Lead Time：12 Weeks
Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：3
Transistor Element Material：SILICON
Turn Off Delay Time：20 ns
Power Dissipation (Max)：45W Tc
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Current - Continuous Drain (Id) @ 25℃：16A Tc
Series：STripFET™
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~175°C TJ
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：90MOhm
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：60V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Current Rating：16A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB16N
Pin Count：4
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：45W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：90m Ω @ 8A, 10V
Vgs(th) (Max) @ Id：1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds：345pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
Rise Time：37ns
Vgs (Max)：±16V
Fall Time (Typ)：12.5 ns
Continuous Drain Current (ID)：16A
Threshold Voltage：1V
Gate to Source Voltage (Vgs)：16V
Drain to Source Breakdown Voltage：60V
Pulsed Drain Current-Max (IDM)：64A
Dual Supply Voltage：60V
Nominal Vgs：4 V
Width：10.4mm
Length：10.75mm
Height：4.6mm
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
REACH SVHC：No SVHC
Lead Free：Lead Free

在庫數 277

1+： $1.71467
10+： $1.61761
100+： $1.52605
500+： $1.43967
1000+： $1.35818

小計金額 $1.71467

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STB16NF06LT4