NTE4153NT1G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
SC-89, SOT-490
MOSFET N-CH 20V 915MA SC-89
Date Sheet

在庫數 69000

1+： $0.37989
10+： $0.35838
100+： $0.33810
500+： $0.31896
1000+： $0.30091

小計金額 $0.37989

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：4 Weeks
Mounting Type：Surface Mount
Package / Case：SC-89, SOT-490
Surface Mount：YES
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：915mA Ta
Drive Voltage (Max Rds On, Min Rds On)：1.5V 4.5V
Number of Elements：1
Power Dissipation (Max)：300mW Tj
Turn Off Delay Time：25 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：230MOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：20V
Terminal Position：DUAL
Terminal Form：FLAT
Peak Reflow Temperature (Cel)：260
Current Rating：915mA
Time@Peak Reflow Temperature-Max (s)：40
Pin Count：3
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：300mW
Turn On Delay Time：3.7 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：230m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：110pF @ 16V
Gate Charge (Qg) (Max) @ Vgs：1.82nC @ 4.5V
Rise Time：4.4ns
Vgs (Max)：±6V
Fall Time (Typ)：4.4 ns
Continuous Drain Current (ID)：915mA
Threshold Voltage：760mV
Gate to Source Voltage (Vgs)：6V
Drain to Source Breakdown Voltage：20V
Nominal Vgs：760 mV
Height：800μm
Length：1.7mm
Width：950μm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 69000

1+： $0.37989
10+： $0.35838
100+： $0.33810
500+： $0.31896
1000+： $0.30091

小計金額 $0.37989

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NTE4153NT1G