FDN335N

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-236-3, SC-59, SOT-23-3
ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount
Date Sheet

在庫數 123000

1+： $0.64101
10+： $0.60473
100+： $0.57050
500+： $0.53820
1000+： $0.50774

小計金額 $0.64101

仕様よくある質問

Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Contact Plating：Tin
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Transistor Element Material：SILICON
Manufacturer Package Identifier：CASE 527AG-01
Drive Voltage (Max Rds On, Min Rds On)：2.5V 4.5V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：1.5V @ 250μA
Current - Continuous Drain (Id) @ 25℃：1.7A Ta
Number of Elements：1
Power Dissipation (Max)：500mW Ta
Turn Off Delay Time：11 ns
Published：1999
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 5 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：70MOhm
Voltage - Rated DC：20V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：1.7A
Voltage：20V
Element Configuration：Single
Current：17A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：500mW
Turn On Delay Time：5 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：70m Ω @ 1.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：310pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：5nC @ 4.5V
Rise Time：8.5ns
Vgs (Max)：±8V
Fall Time (Typ)：8.5 ns
Continuous Drain Current (ID)：1.7A
Threshold Voltage：900mV
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：20V
Dual Supply Voltage：25V
Nominal Vgs：800 mV
Height：940μm
Length：2.92mm
Width：3.05mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 123000

1+： $0.64101
10+： $0.60473
100+： $0.57050
500+： $0.53820
1000+： $0.50774

小計金額 $0.64101

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FDN335N