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NTQD6866R2
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Arrays
- 8-TSSOP (0.173, 4.40mm Width)
- MOSFET 2N-CH 20V 4.7A 8TSSOP
Date Sheet
在庫數 598
小計金額 $0.00000
仕様 よくある質問
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP (0.173, 4.40mm Width)
- Number of Pins:8
- Transistor Element Material:SILICON
- Number of Elements:2
- Turn Off Delay Time:40 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2006
- JESD-609 Code:e0
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:8
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- Additional Feature:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Voltage - Rated DC:20V
- Max Power Dissipation:940mW
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):240
- Reach Compliance Code:not_compliant
- Current Rating:6.9A
- Time@Peak Reflow Temperature-Max (s):30
- Pin Count:8
- Qualification Status:Not Qualified
- Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2W
- FET Type:2 N-Channel (Dual)
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:32m Ω @ 6.9A, 4.5V
- Vgs(th) (Max) @ Id:1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:1400pF @ 16V
- Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V
- Rise Time:45ns
- Fall Time (Typ):90 ns
- Continuous Drain Current (ID):4.7A
- Gate to Source Voltage (Vgs):12V
- Drain-source On Resistance-Max:0.032Ohm
- Drain to Source Breakdown Voltage:20V
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- FET Feature:Logic Level Gate
- Feedback Cap-Max (Crss):175 pF
- RoHS Status:Non-RoHS Compliant
- Lead Free:Contains Lead
在庫數 598
小計金額 $0.00000
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