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FDMS3602AS
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Arrays
- 8-PowerTDFN
- MOSFET
Date Sheet
在庫數 2195
- 1+: $2.09994
- 10+: $1.98108
- 100+: $1.86894
- 500+: $1.76315
- 1000+: $1.66335
小計金額 $2.09994
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time:13 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Number of Pins:8
- Weight:171mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:15A 26A
- Number of Elements:2
- Turn Off Delay Time:31 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Max Power Dissipation:2.5W
- Terminal Form:NO LEAD
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:not_compliant
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- JESD-30 Code:R-PDSO-N6
- Number of Channels:2
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN SOURCE
- Turn On Delay Time:12 ns
- Power - Max:2.2W 2.5W
- FET Type:2 N-Channel (Dual) Asymmetrical
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:5.6m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id:3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:1770pF @ 13V
- Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
- Rise Time:4.2ns
- Fall Time (Typ):3.2 ns
- Continuous Drain Current (ID):26A
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):15A
- Drain-source On Resistance-Max:0.0056Ohm
- Drain to Source Breakdown Voltage:25V
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- FET Feature:Logic Level Gate
- Feedback Cap-Max (Crss):90 pF
- RoHS Status:ROHS3 Compliant
在庫數 2195
- 1+: $2.09994
- 10+: $1.98108
- 100+: $1.86894
- 500+: $1.76315
- 1000+: $1.66335
小計金額 $2.09994
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