FDS6680A

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET N-CH 30V 12.5A 8-SOIC
Date Sheet

在庫數 10200

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：18 Weeks
Contact Plating：Tin
Package / Case：8-SOIC (0.154, 3.90mm Width)
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12.5A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Turn Off Delay Time：27 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Power Dissipation (Max)：2.5W Ta
Number of Elements：1
Series：PowerTrench®
Published：2004
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：9.5MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：30V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：12.5A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：9.5m Ω @ 12.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1620pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：23nC @ 5V
Rise Time：5ns
Vgs (Max)：±20V
Fall Time (Typ)：15 ns
Continuous Drain Current (ID)：12.5A
Threshold Voltage：2V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Dual Supply Voltage：30V
Recovery Time：28 ns
Nominal Vgs：2 V
Height：1.5mm
Length：5mm
Width：4mm
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
REACH SVHC：No SVHC
Lead Free：Lead Free

在庫數 10200

小計金額 $0.00000

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FDS6680A