FDS6375

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
Transistor: P-MOSFET; unipolar; 20V; 8A; 2.5W; SO8; PowerTrench®
Date Sheet

在庫數 494220

1+： $1.09792
10+： $1.03578
100+： $0.97715
500+： $0.92184
1000+： $0.86966

小計金額 $1.09792

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：18 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：8A Ta
Drive Voltage (Max Rds On, Min Rds On)：2.5V 4.5V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：124 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2001
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：24MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC：-20V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-8A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：12 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：24m Ω @ 8A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2694pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：36nC @ 4.5V
Rise Time：9ns
Drain to Source Voltage (Vdss)：20V
Vgs (Max)：±8V
Fall Time (Typ)：57 ns
Continuous Drain Current (ID)：8A
Threshold Voltage：-700mV
Gate to Source Voltage (Vgs)：8V
Drain Current-Max (Abs) (ID)：8A
Drain to Source Breakdown Voltage：-20V
Dual Supply Voltage：-20V
Nominal Vgs：-700 mV
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 494220

1+： $1.09792
10+： $1.03578
100+： $0.97715
500+： $0.92184
1000+： $0.86966

小計金額 $1.09792

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FDS6375