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STP75NF75FP

在庫數 56000

  • 1+: $5.26159
  • 10+: $4.96376
  • 100+: $4.68279
  • 500+: $4.41773
  • 1000+: $4.16767

小計金額 $5.26159

仕様 よくある質問
  • Factory Lead Time:12 Weeks
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:80A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):45W Tc
  • Turn Off Delay Time:66 ns
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
  • Operating Temperature:-55°C~175°C TJ
  • Packaging:Tube
  • Series:STripFET™ II
  • JESD-609 Code:e3
  • Part Status:ACTIVE (Last Updated: 7 months ago)
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Terminal Finish:Matte Tin (Sn) - annealed
  • Base Part Number:STP75N
  • Number of Channels:1
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:45W
  • Case Connection:ISOLATED
  • Turn On Delay Time:25 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:11m Ω @ 40A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:3700pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:160nC @ 10V
  • Rise Time:100ns
  • Vgs (Max):±20V
  • Fall Time (Typ):30 ns
  • Continuous Drain Current (ID):80A
  • Threshold Voltage:2V
  • JEDEC-95 Code:TO-220AB
  • Gate to Source Voltage (Vgs):20V
  • Drain to Source Breakdown Voltage:75V
  • Avalanche Energy Rating (Eas):700 mJ
  • Max Junction Temperature (Tj):175°C
  • Height:20mm
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant

在庫數 56000

  • 1+: $5.26159
  • 10+: $4.96376
  • 100+: $4.68279
  • 500+: $4.41773
  • 1000+: $4.16767

小計金額 $5.26159

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