FDMC8651

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerTDFN
MOSFET 30V N-Channel Power Trench
Date Sheet

在庫數 52800

1+： $1.67311
10+： $1.57841
100+： $1.48906
500+： $1.40478
1000+： $1.32526

小計金額 $1.67311

仕様よくある質問

Factory Lead Time：34 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Number of Pins：8
Weight：32.13mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：15A Ta 20A Tc
Drive Voltage (Max Rds On, Min Rds On)：2.5V 4.5V
Number of Elements：1
Power Dissipation (Max)：2.3W Ta 41W Tc
Turn Off Delay Time：35 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：1.5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e4
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Resistance：6.1MOhm
Terminal Finish：Nickel/Palladium (Ni/Pd)
Terminal Position：DUAL
Terminal Form：NO LEAD
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：S-PDSO-N5
Qualification Status：Not Qualified
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.3W
Case Connection：DRAIN
Turn On Delay Time：18 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：6.1m Ω @ 15A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：3365pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：27.2nC @ 4.5V
Rise Time：9ns
Vgs (Max)：±12V
Fall Time (Typ)：6 ns
Continuous Drain Current (ID)：15A
Threshold Voltage：800mV
Gate to Source Voltage (Vgs)：12V
Drain Current-Max (Abs) (ID)：64A
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：60A
Max Junction Temperature (Tj)：150°C
Nominal Vgs：1.1 V
Height：1.05mm
Length：3.3mm
Width：3.3mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 52800

1+： $1.67311
10+： $1.57841
100+： $1.48906
500+： $1.40478
1000+： $1.32526

小計金額 $1.67311

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FDMC8651