STD6N62K3

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 620V 5.5A DPAK
Date Sheet

在庫數 2500

1+： $5.21205
10+： $4.91703
100+： $4.63871
500+： $4.37614
1000+： $4.12843

小計金額 $5.21205

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：5.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：90W Tc
Turn Off Delay Time：49 ns
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Series：SuperMESH3™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：1.2Ohm
Terminal Finish：Matte Tin (Sn) - annealed
Additional Feature：ULTRA LOW-ON RESISTANCE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Base Part Number：STD6N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：90W
Turn On Delay Time：22 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.28 Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id：4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds：706pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：25.7nC @ 10V
Rise Time：12.5ns
Drain to Source Voltage (Vdss)：620V
Vgs (Max)：±30V
Fall Time (Typ)：19 ns
Continuous Drain Current (ID)：5.5A
Threshold Voltage：3.75V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：650V
Pulsed Drain Current-Max (IDM)：22A
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2500

1+： $5.21205
10+： $4.91703
100+： $4.63871
500+： $4.37614
1000+： $4.12843

小計金額 $5.21205

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STD6N62K3