FDD86110

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mO
Date Sheet

在庫數 5340

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：8 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12.5A Ta 50A Tc
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：3.1W Ta 127W Tc
Turn Off Delay Time：19 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：3.1W
Case Connection：DRAIN
Turn On Delay Time：12 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：10.2m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2265pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：35nC @ 10V
Rise Time：5.4ns
Vgs (Max)：±20V
Fall Time (Typ)：3.9 ns
Continuous Drain Current (ID)：12.5A
Threshold Voltage：2.8V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：50A
Drain to Source Breakdown Voltage：100V
Pulsed Drain Current-Max (IDM)：60A
Nominal Vgs：2.8 V
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 5340

小計金額 $0.00000

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FDD86110