STD1NK60-1

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET N-CH 600V 1A IPAK
Date Sheet

在庫數 3000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：12 Weeks
Contact Plating：Tin
Mount：Surface Mount, Through Hole
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：1A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：30W Tc
Turn Off Delay Time：19 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3.7V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：SuperMESH™
JESD-609 Code：e3
Part Status：ACTIVE (Last Updated: 8 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD1NK
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：30W
Turn On Delay Time：6.5 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8.5 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：156pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
Rise Time：5ns
Vgs (Max)：±30V
Fall Time (Typ)：25 ns
Continuous Drain Current (ID)：1A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：1A
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：4A
Avalanche Energy Rating (Eas)：25 mJ
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3000

小計金額 $0.00000

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STD1NK60-1