STU8NM50N

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET N-CH 500V 5A IPAK
Date Sheet

在庫數 2041

1+： $2.07331
10+： $1.95595
100+： $1.84524
500+： $1.74079
1000+： $1.64225

小計金額 $2.07331

仕様よくある質問

Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：45W Tc
Turn Off Delay Time：25 ns
Operating Temperature：150°C TJ
Packaging：Tube
Series：MDmesh™ II
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Position：SINGLE
Peak Reflow Temperature (Cel)：260
Base Part Number：STU8N
Pin Count：3
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Turn On Delay Time：7 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：790m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：364pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
Rise Time：4.4ns
Drain to Source Voltage (Vdss)：500V
Vgs (Max)：±25V
Fall Time (Typ)：8.8 ns
Continuous Drain Current (ID)：5A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：25V
Drain Current-Max (Abs) (ID)：5A
Drain-source On Resistance-Max：0.79Ohm
Pulsed Drain Current-Max (IDM)：20A
DS Breakdown Voltage-Min：500V
Avalanche Energy Rating (Eas)：140 mJ
Height：6.9mm
Length：6.6mm
Width：2.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2041

1+： $2.07331
10+： $1.95595
100+： $1.84524
500+： $1.74079
1000+： $1.64225

小計金額 $2.07331

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STU8NM50N