FDMS86520L

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerTDFN
MOSFET 60V N-Channel PowerTrench MOSFET
Date Sheet

在庫數 6000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：5 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Number of Pins：8
Weight：74mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：13.5A Ta 22A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 69W Tc
Turn Off Delay Time：32 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 3 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Position：DUAL
Terminal Form：FLAT
JESD-30 Code：R-PDSO-F5
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：15 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8.2m Ω @ 13.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：4615pF @ 30V
Gate Charge (Qg) (Max) @ Vgs：63nC @ 10V
Rise Time：5.6ns
Vgs (Max)：±20V
Fall Time (Typ)：3.4 ns
Continuous Drain Current (ID)：13.5A
Threshold Voltage：1.8V
JEDEC-95 Code：MO-240AA
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：22A
Drain to Source Breakdown Voltage：60V
Pulsed Drain Current-Max (IDM)：60A
Max Junction Temperature (Tj)：150°C
Nominal Vgs：1.8 V
Height：1.1mm
Length：5mm
Width：6mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 6000

小計金額 $0.00000

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FDMS86520L