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FDP2572
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- MOSFET N-CH 150V 29A TO-220AB
Date Sheet
在庫數 218
- 1+: $2.46564
- 10+: $2.32608
- 100+: $2.19441
- 500+: $2.07020
- 1000+: $1.95302
小計金額 $2.46564
仕様 よくある質問
- Factory Lead Time:9 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Number of Pins:3
- Weight:1.8g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:4A Ta 29A Tc
- Drive Voltage (Max Rds On, Min Rds On):6V 10V
- Number of Elements:1
- Power Dissipation (Max):135W Tc
- Turn Off Delay Time:31 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tube
- Series:PowerTrench®
- Published:2002
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:150V
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Current Rating:29A
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:135W
- Case Connection:DRAIN
- Turn On Delay Time:11 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:54m Ω @ 9A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:1770pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:34nC @ 10V
- Rise Time:14ns
- Vgs (Max):±20V
- Fall Time (Typ):14 ns
- Continuous Drain Current (ID):29A
- Threshold Voltage:4V
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):4A
- Drain-source On Resistance-Max:0.054Ohm
- Drain to Source Breakdown Voltage:150V
- Nominal Vgs:4 V
- Height:9.4mm
- Length:10.67mm
- Width:4.83mm
- REACH SVHC:No SVHC
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 218
- 1+: $2.46564
- 10+: $2.32608
- 100+: $2.19441
- 500+: $2.07020
- 1000+: $1.95302
小計金額 $2.46564
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