STD5N52K3

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
STMICROELECTRONICS STD5N52K3 MOSFET Transistor, N Channel, 4.4 A, 525 V, 1.2 ohm, 10 V, 3.75 V
Date Sheet

在庫數 22976

1+： $1.68632
10+： $1.59087
100+： $1.50082
500+： $1.41587
1000+： $1.33572

小計金額 $1.68632

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4.4A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：70W Tc
Turn Off Delay Time：29 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：SuperMESH3™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：1.5Ohm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Position：SINGLE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Base Part Number：STD5N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
Turn On Delay Time：9 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id：4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds：545pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
Rise Time：11ns
Vgs (Max)：±30V
Fall Time (Typ)：16 ns
Continuous Drain Current (ID)：4.4A
Threshold Voltage：3.75V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：525V
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 22976

1+： $1.68632
10+： $1.59087
100+： $1.50082
500+： $1.41587
1000+： $1.33572

小計金額 $1.68632

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STD5N52K3