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STP9NK90Z
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- Trans MOSFET N-CH 900V 8A 3-Pin(3 Tab) TO-220 Tube
Date Sheet
在庫數 17
- 1+: $4.03661
- 10+: $3.80812
- 100+: $3.59257
- 500+: $3.38922
- 1000+: $3.19737
小計金額 $4.03661
仕様 よくある質問
- Factory Lead Time:12 Weeks
- Package / Case:TO-220-3
- Mount:Through Hole
- Mounting Type:Through Hole
- Number of Pins:3
- Weight:4.535924g
- Transistor Element Material:SILICON
- Power Dissipation (Max):160W Tc
- Turn Off Delay Time:55 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4.5V @ 100μA
- Current - Continuous Drain (Id) @ 25℃:8A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Packaging:Tube
- Series:SuperMESH™
- Operating Temperature:-55°C~150°C TJ
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Resistance:1.3Ohm
- Terminal Finish:Matte Tin (Sn)
- Additional Feature:AVALANCHE RATED
- Voltage - Rated DC:900V
- Current Rating:8A
- Base Part Number:STP9N
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:160W
- Turn On Delay Time:22 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:1.3 Ω @ 3.6A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:2115pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:72nC @ 10V
- Rise Time:13ns
- Vgs (Max):±30V
- Fall Time (Typ):28 ns
- Continuous Drain Current (ID):8A
- Threshold Voltage:3.75V
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):30V
- Drain Current-Max (Abs) (ID):8A
- Drain to Source Breakdown Voltage:900V
- Avalanche Energy Rating (Eas):220 mJ
- Width:4.6mm
- Height:15.75mm
- Length:10.4mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 17
- 1+: $4.03661
- 10+: $3.80812
- 100+: $3.59257
- 500+: $3.38922
- 1000+: $3.19737
小計金額 $4.03661
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