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FDMS0310AS
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-PowerTDFN
- MOSFET Gaming/DT/Notebook/NVDC/Server
Date Sheet
在庫數 41750
- 1+: $1.08616
- 10+: $1.02468
- 100+: $0.96668
- 500+: $0.91196
- 1000+: $0.86034
小計金額 $1.08616
仕様 よくある質問
- Factory Lead Time:26 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Number of Pins:8
- Weight:74mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:19A Ta 22A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):2.5W Ta 41W Tc
- Turn Off Delay Time:25 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:3V @ 1mA
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®, SyncFET™
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:5
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Terminal Position:DUAL
- Terminal Form:FLAT
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- JESD-30 Code:R-PDSO-F5
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- Turn On Delay Time:9 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:4.3m Ω @ 19A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:2280pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:37nC @ 10V
- Rise Time:3.9ns
- Vgs (Max):±20V
- Fall Time (Typ):3.2 ns
- Continuous Drain Current (ID):22A
- JEDEC-95 Code:MO-240AA
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):19A
- Drain-source On Resistance-Max:0.0043Ohm
- Drain to Source Breakdown Voltage:30V
- Pulsed Drain Current-Max (IDM):100A
- Avalanche Energy Rating (Eas):33 mJ
- REACH SVHC:not_compliant
- RoHS Status:ROHS3 Compliant
在庫數 41750
- 1+: $1.08616
- 10+: $1.02468
- 100+: $0.96668
- 500+: $0.91196
- 1000+: $0.86034
小計金額 $1.08616
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