FDMS7678

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerTDFN
ON SEMICONDUCTOR - FDMS7678 - MOSFET, N-CH, 30V, 8PQFN
Date Sheet

在庫數 3000

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
Factory Lead Time：26 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Number of Pins：8
Weight：74mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：17.5A Ta 26A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.3W Ta 41W Tc
Turn Off Delay Time：26 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Position：DUAL
Terminal Form：FLAT
JESD-30 Code：R-PDSO-F5
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：41W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：5.5m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2410pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：39nC @ 10V
Rise Time：4ns
Vgs (Max)：±20V
Fall Time (Typ)：3 ns
Continuous Drain Current (ID)：17.5A
Threshold Voltage：1.5V
JEDEC-95 Code：MO-240AA
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：26A
Drain-source On Resistance-Max：0.0055Ohm
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：70A
Avalanche Energy Rating (Eas)：54 mJ
Nominal Vgs：1.5 V
Height：1.05mm
Length：5.1mm
Width：6.25mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3000

小計金額 $0.00000

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FDMS7678