FQD13N06LTM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 60V 11A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 1131

1+： $0.86884
10+： $0.81966
100+： $0.77326
500+： $0.72949
1000+： $0.68820

小計金額 $0.86884

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：8 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：11A Tc
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 28W Tc
Turn Off Delay Time：20 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：115mOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：60V
Terminal Form：GULL WING
Current Rating：11A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：8 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：115m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：6.4nC @ 5V
Rise Time：90ns
Vgs (Max)：±20V
Fall Time (Typ)：40 ns
Continuous Drain Current (ID)：11A
Threshold Voltage：2.5V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：60V
Pulsed Drain Current-Max (IDM)：44A
Avalanche Energy Rating (Eas)：90 mJ
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 1131

1+： $0.86884
10+： $0.81966
100+： $0.77326
500+： $0.72949
1000+： $0.68820

小計金額 $0.86884

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FQD13N06LTM