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FDD8770
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 25V 35A DPAK
Date Sheet
在庫數 2500
- 1+: $1.37906
- 10+: $1.30100
- 100+: $1.22736
- 500+: $1.15788
- 1000+: $1.09234
小計金額 $1.37906
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time:10 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Weight:260.37mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:35A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):115W Tc
- Turn Off Delay Time:49 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:4MOhm
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:25V
- Terminal Form:GULL WING
- Current Rating:35A
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:115W
- Case Connection:DRAIN
- Turn On Delay Time:10 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:4m Ω @ 35A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:3720pF @ 13V
- Gate Charge (Qg) (Max) @ Vgs:73nC @ 10V
- Rise Time:12ns
- Vgs (Max):±20V
- Fall Time (Typ):25 ns
- Continuous Drain Current (ID):35A
- Threshold Voltage:1.6V
- JEDEC-95 Code:TO-252AA
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:25V
- Pulsed Drain Current-Max (IDM):407A
- Nominal Vgs:1.6 V
- Height:6.35mm
- Length:6.35mm
- Width:6.35mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 2500
- 1+: $1.37906
- 10+: $1.30100
- 100+: $1.22736
- 500+: $1.15788
- 1000+: $1.09234
小計金額 $1.37906
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