FDD3N40TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 400V 2A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 36000

1+： $0.73701
10+： $0.69530
100+： $0.65594
500+： $0.61881
1000+： $0.58378

小計金額 $0.73701

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 week ago)
Factory Lead Time：4 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：30W Tc
Turn Off Delay Time：10 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：UniFET™
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：3.4Ohm
Terminal Finish：Tin (Sn)
Additional Feature：FAST SWITCHING
Terminal Form：GULL WING
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：30W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：3.4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：225pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：6nC @ 10V
Rise Time：30ns
Vgs (Max)：±30V
Fall Time (Typ)：25 ns
Continuous Drain Current (ID)：2A
Threshold Voltage：5V
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：2A
Drain to Source Breakdown Voltage：400V
Pulsed Drain Current-Max (IDM)：8A
Avalanche Energy Rating (Eas)：46 mJ
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 36000

1+： $0.73701
10+： $0.69530
100+： $0.65594
500+： $0.61881
1000+： $0.58378

小計金額 $0.73701

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