FDB2572

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 150V 29A TO-263AB
Date Sheet

在庫數 640

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 6 days ago)
Factory Lead Time：8 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4A Ta 29A Tc
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：135W Tc
Turn Off Delay Time：31 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2002
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：54MOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：150V
Terminal Form：GULL WING
Current Rating：29A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：135W
Case Connection：DRAIN
Turn On Delay Time：11 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：54m Ω @ 9A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：34nC @ 10V
Rise Time：14ns
Vgs (Max)：±20V
Fall Time (Typ)：14 ns
Continuous Drain Current (ID)：29A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：4A
Drain to Source Breakdown Voltage：150V
Avalanche Energy Rating (Eas)：36 mJ
Height：4.83mm
Length：10.67mm
Width：11.33mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 640

小計金額 $0.00000

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