STD155N3LH6

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2 Tab) D2PAK T/R
Date Sheet

在庫數 26520

1+： $2.13963
10+： $2.01852
100+： $1.90427
500+： $1.79648
1000+： $1.69479

小計金額 $2.13963

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：80A Tc
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Number of Elements：1
Power Dissipation (Max)：110W Tc
Turn Off Delay Time：100 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：DeepGATE™, STripFET™ VI
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：3MOhm
Terminal Finish：Matte Tin (Sn) - annealed
Additional Feature：ULTRA-LOW RESISTANCE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD15
Pin Count：4
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：110W
Case Connection：DRAIN
Turn On Delay Time：15 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：3m Ω @ 40A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：3800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：80nC @ 5V
Rise Time：85ns
Vgs (Max)：±20V
Fall Time (Typ)：40 ns
Continuous Drain Current (ID)：80A
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Avalanche Energy Rating (Eas)：525 mJ
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 26520

1+： $2.13963
10+： $2.01852
100+： $1.90427
500+： $1.79648
1000+： $1.69479

小計金額 $2.13963

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STD155N3LH6