FCB110N65F

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 650V 35A D2PAK
Date Sheet

在庫數 50

1+： $5.98763
10+： $5.64871
100+： $5.32897
500+： $5.02733
1000+： $4.74277

小計金額 $5.98763

仕様よくある質問

Factory Lead Time：13 Weeks
Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Turn Off Delay Time：89 ns
Power Dissipation (Max)：357W Tc
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：35A Tc
Series：FRFET®, SuperFET® II
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
HTS Code：8541.29.00.95
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：30
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Case Connection：DRAIN
Turn On Delay Time：31 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：110m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id：5V @ 3.5mA
Input Capacitance (Ciss) (Max) @ Vds：4895pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：145nC @ 10V
Rise Time：21ns
Drain to Source Voltage (Vdss)：650V
Vgs (Max)：±20V
Fall Time (Typ)：5.7 ns
Continuous Drain Current (ID)：35A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.11Ohm
Pulsed Drain Current-Max (IDM)：105A
DS Breakdown Voltage-Min：650V
Avalanche Energy Rating (Eas)：809 mJ
RoHS Status：ROHS3 Compliant

在庫數 50

1+： $5.98763
10+： $5.64871
100+： $5.32897
500+： $5.02733
1000+： $4.74277

小計金額 $5.98763

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FCB110N65F