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STB80NF55L-06T4

在庫數 585

  • 1+: $2.84949
  • 10+: $2.68820
  • 100+: $2.53604
  • 500+: $2.39249
  • 1000+: $2.25707

小計金額 $2.84949

仕様 よくある質問
  • Factory Lead Time:12 Weeks
  • Mount:Surface Mount
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:80A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):300W Tc
  • Turn Off Delay Time:135 ns
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:1V @ 250μA
  • Operating Temperature:-55°C~175°C TJ
  • Packaging:Tape & Reel (TR)
  • Series:STripFET™ II
  • JESD-609 Code:e3
  • Part Status:ACTIVE (Last Updated: 6 months ago)
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:2
  • ECCN Code:EAR99
  • Terminal Finish:Matte Tin (Sn)
  • Additional Feature:LOGIC LEVEL COMPATIBLE
  • Terminal Form:GULL WING
  • Peak Reflow Temperature (Cel):245
  • Time@Peak Reflow Temperature-Max (s):30
  • Base Part Number:STB80N
  • JESD-30 Code:R-PSSO-G2
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:300W
  • Case Connection:DRAIN
  • Turn On Delay Time:32 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:6.5m Ω @ 40A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:4850pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:136nC @ 5V
  • Rise Time:180ns
  • Vgs (Max):±20V
  • Fall Time (Typ):80 ns
  • Continuous Drain Current (ID):80A
  • Threshold Voltage:1V
  • Gate to Source Voltage (Vgs):16V
  • Drain-source On Resistance-Max:0.008Ohm
  • Drain to Source Breakdown Voltage:55V
  • Height:4.6mm
  • Length:10.4mm
  • Width:9.35mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 585

  • 1+: $2.84949
  • 10+: $2.68820
  • 100+: $2.53604
  • 500+: $2.39249
  • 1000+: $2.25707

小計金額 $2.84949

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