CSD13306W

Texas Instruments
Transistors - FETs, MOSFETs - Single
6-UFBGA, DSBGA
MOSFET N-CH 12V 3.5A
Date Sheet

在庫數 21000

1+： $0.60581
10+： $0.57152
100+： $0.53917
500+： $0.50865
1000+： $0.47986

小計金額 $0.60581

仕様よくある質問

Factory Lead Time：6 Weeks
Contact Plating：Copper, Silver, Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：6-UFBGA, DSBGA
Number of Pins：6
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：3.5A Ta
Drive Voltage (Max Rds On, Min Rds On)：2.5V 4.5V
Number of Elements：1
Power Dissipation (Max)：1.9W Ta
Turn Off Delay Time：20 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：1.3V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：NexFET™
JESD-609 Code：e1
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 week ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Terminal Finish：Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature：ULTRA LOW RESISTANCE
Terminal Position：BOTTOM
Terminal Form：BALL
Base Part Number：CSD13306
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Turn On Delay Time：7 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：10.2m Ω @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1370pF @ 6V
Gate Charge (Qg) (Max) @ Vgs：11.2nC @ 4.5V
Rise Time：11ns
Drain to Source Voltage (Vdss)：12V
Vgs (Max)：±10V
Fall Time (Typ)：8 ns
Continuous Drain Current (ID)：3.5A
Gate to Source Voltage (Vgs)：10V
Drain-source On Resistance-Max：0.0155Ohm
DS Breakdown Voltage-Min：12V
Feedback Cap-Max (Crss)：294 pF
Height：1mm
Length：1.5mm
Width：1.8mm
Thickness：2mm
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 21000

1+： $0.60581
10+： $0.57152
100+： $0.53917
500+： $0.50865
1000+： $0.47986

小計金額 $0.60581

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Phone

CSD13306W