STD100NH02LT4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-Ch 24 Volt 60 Amp
Date Sheet

在庫數 47

1+： $0.96063
10+： $0.90626
100+： $0.85496
500+： $0.80657
1000+： $0.76091

小計金額 $0.96063

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：60A Tc
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Number of Elements：1
Power Dissipation (Max)：100W Tc
Turn Off Delay Time：60 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：STripFET™ II
JESD-609 Code：e3
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：4.8mOhm
Terminal Finish：Matte Tin (Sn)
Additional Feature：LOW THRESHOLD
Voltage - Rated DC：24V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Reach Compliance Code：not_compliant
Current Rating：60A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD10
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：100W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：3940pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：84nC @ 10V
Rise Time：200ns
Vgs (Max)：±20V
Fall Time (Typ)：35 ns
Continuous Drain Current (ID)：60A
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：24V
Pulsed Drain Current-Max (IDM)：240A
Avalanche Energy Rating (Eas)：800 mJ
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 47

1+： $0.96063
10+： $0.90626
100+： $0.85496
500+： $0.80657
1000+： $0.76091

小計金額 $0.96063

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STD100NH02LT4