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STP100N6F7
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- MOSFET N-CH 60V 100A F7 TO220AB
Date Sheet
在庫數 38685
- 1+: $1.79187
- 10+: $1.69044
- 100+: $1.59476
- 500+: $1.50449
- 1000+: $1.41933
小計金額 $1.79187
仕様 よくある質問
- Factory Lead Time:22 Weeks
- Package / Case:TO-220-3
- Mounting Type:Through Hole
- Mount:Through Hole
- Transistor Element Material:SILICON
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
- Power Dissipation (Max):125W Tc
- Number of Elements:1
- Drive Voltage (Max Rds On, Min Rds On):10V
- Current - Continuous Drain (Id) @ 25℃:100A Tc
- Series:STripFET™ F7
- Packaging:Tube
- Operating Temperature:-55°C~175°C TJ
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Position:SINGLE
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Base Part Number:STP100
- JESD-30 Code:R-PSFM-T3
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:5.6m Ω @ 50A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:1980pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
- Drain to Source Voltage (Vdss):60V
- Vgs (Max):±20V
- Continuous Drain Current (ID):100A
- JEDEC-95 Code:TO-220AB
- Drain-source On Resistance-Max:0.0056Ohm
- Pulsed Drain Current-Max (IDM):400A
- DS Breakdown Voltage-Min:60V
- Avalanche Energy Rating (Eas):200 mJ
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 38685
- 1+: $1.79187
- 10+: $1.69044
- 100+: $1.59476
- 500+: $1.50449
- 1000+: $1.41933
小計金額 $1.79187
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