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TP2104N3-G
-
Microchip Technology
-
Transistors - FETs, MOSFETs - Single
- TO-226-3, TO-92-3 (TO-226AA)
- Trans MOSFET P-CH 40V 0.25A 3-Pin TO-92
Date Sheet
在庫數 3000
- 1+： $0.70381
- 10+： $0.66398
- 100+： $0.62639
- 500+： $0.59094
- 1000+： $0.55749
小計金額 $0.70381
仕様 よくある質問
- Factory Lead Time：6 Weeks
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Mounting Type：Through Hole
- Mount：Through Hole
- Number of Pins：3
- Weight：453.59237mg
- Transistor Element Material：SILICON
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2V @ 1mA
- Turn Off Delay Time：5 ns
- Power Dissipation (Max)：740mW Ta
- Number of Elements：1
- Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
- Current - Continuous Drain (Id) @ 25℃：175mA Tj
- Published：2013
- Packaging：Bulk
- Operating Temperature：-55°C~150°C TJ
- JESD-609 Code：e3
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn)
- Additional Feature：LOW THRESHOLD
- Terminal Position：BOTTOM
- Peak Reflow Temperature (Cel)：NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)：NOT APPLICABLE
- Qualification Status：Not Qualified
- Number of Channels：1
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：740mW
- Turn On Delay Time：4 ns
- FET Type：P-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：6 Ω @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds：60pF @ 25V
- Rise Time：4ns
- Drain to Source Voltage (Vdss)：40V
- Vgs (Max)：±20V
- Fall Time (Typ)：4 ns
- Continuous Drain Current (ID)：-250mA
- Gate to Source Voltage (Vgs)：20V
- Drain-source On Resistance-Max：6Ohm
- Drain to Source Breakdown Voltage：-40V
- Width：4.19mm
- Length：5.21mm
- Height：5.33mm
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 3000
- 1+： $0.70381
- 10+： $0.66398
- 100+： $0.62639
- 500+： $0.59094
- 1000+： $0.55749
小計金額 $0.70381
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